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参数资料
| 型号： | MMBT2369ALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3G |
2–308
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Switching Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
15
Vdc
Collector – Emitter Voltage
VCES
40
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
4.5
Vdc
Collector Current — Continuous
IC
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
15
—
Vdc
Collector – Emitter Breakdown Voltage
(IC = 10 Adc, VBE = 0)
V(BR)CES
40
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.5
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
ICBO
—
0.4
30
Adc
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
MMBT2369A
ICES
—
0.4
Adc
1. FR– 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT2369LT1
MMBT2369ALT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
*Motorola Preferred Device
*
COLLECTOR
3
1
BASE
2
EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
| MMBT2369LT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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