- 您现在的位置：买卖IC网 > PDF目录98024 > MMBT2369ALT3G (ON SEMICONDUCTOR) 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PDF资料下载
参数资料
| 型号： | MMBT2369ALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 25/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3G |
Tape and Reel Specifications
6–4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
A
Full Radius
T Max
G
20.2 mm Min
(.795
″)
1.5 mm Min
(.06
″)
13.0 mm
± 0.5 mm
(.512
″ ± .002″)
50 mm Min
(1.969
″)
Outside Dimension
Measured at Edge
Inside Dimension
Measured Near Hub
Size
A Max
G
T Max
8 mm
330 mm
(12.992
″)
8.4 mm + 1.5 mm, – 0.0
(.33
″ + .059″, –0.00)
14.4 mm
(.56
″)
12 mm
330 mm
(12.992
″)
12.4 mm + 2.0 mm, – 0.0
(.49
″ + .079″, –0.00)
18.4 mm
(.72
″)
16 mm
360 mm
(14.173
″)
16.4 mm + 2.0 mm, – 0.0
(.646
″ + .078″, –0.00)
22.4 mm
(.882
″)
24 mm
360 mm
(14.173
″)
24.4 mm + 2.0 mm, – 0.0
(.961
″ + .070″, –0.00)
30.4 mm
(1.197
″)
Reel Dimensions
Metric Dimensions Govern — English are in parentheses for reference only
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT2484LT3 | 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3640LT3 | 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3904 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906WT3 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3904WT3 | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
| MMBT2369LT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。