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参数资料
| 型号： | MMBT2369ALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 4/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3G |
6–7
Packaging Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
ADHESIVE TAPE ON
TOP SIDE
FLAT SIDE
CARRIER
STRIP
FLAT SIDE OF TRANSISTOR
AND ADHESIVE TAPE VISIBLE.
ADHESIVE TAPE ON
TOP SIDE
ROUNDED SIDE
CARRIER
STRIP
ROUNDED SIDE OF TRANSISTOR AND
ADHESIVE TAPE VISIBLE.
252 mm
9.92”
58 mm
2.28”
MAX
13”
MAX
330 mm
Style M fan fold box is equivalent to styles E and F of
reel pack dependent on feed orientation from box.
Style P fan fold box is equivalent to styles A and B of
reel pack dependent on feed orientation from box.
100 GRAM
PULL FORCE
16 mm
HOLDING
FIXTURE
HOLDING
FIXTURE
HOLDING
FIXTURE
16 mm
70 GRAM
PULL FORCE
500 GRAM PULL FORCE
The component shall not pull free with a 300 gram
load applied to the leads for 3
± 1 second.
The component shall not pull free with a 70 gram
load applied to the leads for 3
± 1 second.
There shall be no deviation in the leads and
no component leads shall be pulled free of
the tape with a 500 gram load applied to the
component body for 3
± 1 second.
Figure 2. Style M
Figure 3. Style P
Figure 4. Fan Fold Box Dimensions
Figure 5. Test #1
Figure 6. Test #2
Figure 7. Test #3
ADHESION PULL TESTS
FAN FOLD BOX STYLES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
| MMBT2369LT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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