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参数资料
| 型号： | MMBT2369ALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 12/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3G |
MMBT2369LT1 MMBT2369ALT1
2–309
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369
(IC = 10 mAdc, VCE = 1.0 Vdc)
MMBT2369A
(IC = 10 mAdc, VCE = 0.35 Vdc)
MMBT2369A
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
MMBT2369A
(IC = 30 mAdc, VCE = 0.4 Vdc)
MMBT2369A
(IC = 100 mAdc, VCE = 2.0 Vdc)
MMBT2369
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369A
hFE
40
—
40
20
30
20
—
120
—
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
MMBT2369A
(IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
VCE(sat)
—
0.25
0.20
0.30
0.25
0.50
Vdc
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT2369A
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
MMBT2369A
(IC = 30 mAdc, IB = 3.0 mAdc)
MMBT2369A
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
VBE(sat)
0.7
—
0.85
1.02
1.15
1.60
Vdc
SMALL– SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
hfe
5.0
—
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
ts
—
5.0
13
ns
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
ton
—
8.0
12
ns
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
toff
—
10
18
ns
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
| MMBT2369LT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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