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参数资料
| 型号： | MMBT2369ALT3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 19/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3G |
MMBT2369LT1 MMBT2369ALT1
2–310
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. ton Circuit — 10 mA
Figure 2. ton Circuit — 100 mA
Figure 3. toff Circuit — 10 mA
Figure 4. toff Circuit — 100 mA
Figure 5. Turn–On and Turn–Off Time Test Circuit
+10.6 V
–1.5 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
3 V
270
3.3 k
Cs* < 4 pF
10 V
95
1 k
Cs* < 12 pF
+10.8 V
–2 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
+10.75 V
0
–9.15 V
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
< 1 ns
–8.6 V
+11.4 V
t1
0
PULSE WIDTH (t1) BETWEEN
10 AND 500
s
DUTY CYCLE = 2%
270
3.3 k
Cs* < 4 pF
95
1 k
Cs* < 12 pF
10 V
1N916
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
Vout
90%
10%
Vin
0
ton
Vin
3.3 k
50
220
50
0.1
F
Vout
3.3 k
0.0023
F
0.0023
F
0.005
F 0.005 F
0.1
F
0.1
F
VBB +–
+
– VCC = 3 V
Vin
0
90%
10%
toff
Vout
VBB = +12 V
Vin = –15 V
TO OSCILLOSCOPE
INPUT IMPEDANCE = 50
RISE TIME = 1 ns
TURN–OFF WAVEFORMS
PULSE GENERATOR
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50
PW
≥ 300 ns
DUTY CYCLE < 2%
TURN–ON WAVEFORMS
* Total shunt capacitance of test jig and connectors.
6
5
4
3
2
1
10
0.1
0.2
0.5
1.0
2.0
5.0
REVERSE BIAS (VOLTS)
CAP
ACIT
ANCE
(pF
)
SWITCHING
TIMES
(nsec)
LIMIT
TYPICAL
Cob
Cib
TJ = 25°C
Figure 6. Junction Capacitance Variations
100
2
5
10
20
50
1
2
5
10
20
50
100
IC, COLLECTOR CURRENT (mA)
Figure 7. Typical Switching Times
βF = 10
VCC = 10 V
VOB = 2 V
tr (VCC = 3 V)
VCC = 10 V
td
ts
tr
tf
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
| MMBT2369LT1G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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