参数资料
型号: MMBT2369AD87Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件页数: 9/14页
文件大小: 749K
代理商: MMBT2369AD87Z
Typical Characteristics (continued)
Output Capacitance vs
Reverse Bias Voltage
0.1
0.5
1
5
10
50
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CA
P
A
CI
T
A
N
C
E
(
p
F
)
C ibo
C obo
F = 1.0MHz
Switching Times vs
Collector Current
2
5
10
20
50
100
300
1
2
5
10
20
50
100
I
- COLLECTOR CURRENT (mA)
SW
IT
CH
IN
G
TI
M
E
S
(n
s
)
I
= 10 I
= I
= 10
V
= 3.0 V
CC
C
ts
t f
ts
t s
tstst d
ts
t r
C
B1
B2
Storage Time vs Turn On
and Turn Off Base Currents
0
2
468
10
-12
-10
-8
-6
-4
-2
0
I
- TURN ON BASE CURRENT (mA)
I
-
T
U
R
N
O
F
BA
S
E
C
U
RR
E
N
T
(
m
A
)
6.0 ns
4.0 ns
I = 10 mA
C
V
= 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Turn On
and Turn Off Base Currents
024
68
10
-12
-10
-8
-6
-4
-2
0
I
- TURN ON BASE CURRENT (mA)
I
-
T
U
R
N
OF
F
BA
S
E
CU
R
E
N
T
(
m
A
)
6.0 ns
4.0 ns
I = 10 mA
C
V
= 3.0 V
CC
t = 3.0 ns
s
B1
B2
Storage Time vs Turn On
and Turn Off Base Currents
0
5
10
15
20
25
30
-30
-25
-20
-15
-10
-5
0
I
- TURN ON BASE CURRENT (mA)
I
-
T
U
R
N
OF
F
BA
S
E
CU
RR
E
N
T
(
m
A
)
I = 100 mA
C
V
= 3.0 V
CC
t = 3.0 ns
4.0 ns
6.0 ns
8.0 ns
16.0 ns
B1
B2
S
PN2369A
/
MMBT2369A
NPN Switching Transistor
(continued)
Switching Times vs
Ambient Temperature
25
50
75
100
0
2
4
6
8
10
12
T
- AM BIENT TE MPERATURE ( C)
SW
IT
C
H
IN
G
T
IM
E
S
(
n
s
)
I = 10 mA, I
= 3.0 mA, I
= 1.5 mA, V
= 3.0 V
CC
A
°
ts
t f
ts
t s
ts
t d
ts
t r
C
B1
B2
相关PDF资料
PDF描述
MMBT2369ALT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369LT3 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2369ALT3G 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT2484LT3 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT3640LT3 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
相关代理商/技术参数
参数描述
MMBT2369AL 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23
MMBT2369ALT1 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBT2369ALT1G 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBT2369ALT3 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBT2369ALT3G 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2