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参数资料
| 型号： | MMBT2369ALT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 20/25页 |
| 文件大小： | 416K |
| 代理商： | MMBT2369ALT3 |
MMBT2369LT1 MMBT2369ALT1
2–311
Motorola Small–Signal Transistors, FETs and Diodes Device Data
25
°C
100
°C
QT, βF = 10
500
1
IC, COLLECTOR CURRENT (mA)
Figure 8. Maximum Charge Data
10
20
50
100
200
2
5
10
20
50
100
VCC = 10 V
QT, βF = 40
QA, VCC = 10 V
QA, VCC = 3 V
CHARGE
(pC)
+5 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 5 s
DUTY CYCLE = 2%
3 V
270
4.3 k
Cs* < 4 pF
V
10 pF MAX
VALUES REFER TO
IC = 10 mA TEST
Figure 9. QT Test Circuit
+6 V
–4 V
0
t1
< 1 ns
PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2%
10 V
980
500
Cs* < 3 pF
C
COPT
TIME
C < COPT
C = 0
Figure 10. Turn–Off Waveform
Figure 11. Storage Time Equivalent Test Circuit
V
CE
,MAXIMUM
COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
1.0
0.8
0.6
0.4
0.2
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
IC = 3 mA
IC = 10 mA
IC = 30 mA
IC = 50 mA
IC = 100 mA
TJ = 25°C
IB, BASE CURRENT (mA)
Figure 12. Maximum Collector Saturation Voltage Characteristics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT2369ALT3G | 功能描述:两极晶体管 - BJT 200mA 15V Switching NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2369L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switcing Transistors |
| MMBT2369LT1 | 功能描述:两极晶体管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT2369LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Switching Transistors NPN Silicon |
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