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参数资料
| 型号： | MMBT3640LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 155K |
| 代理商： | MMBT3640LT1 |
Switching Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–12
Vdc
Collector–Base Voltage
VCBO
–12
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–80
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
DEVICE MARKING
MMBT3640LT1 = 2J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –100 Adc, VBE = 0)
V(BR)CES
–12
—
Vdc
Collector–Emitter Sustaining Voltage(1) (IC = –10 mAdc, IB = 0)
VCEO(sus)
–12
—
Vdc
Collector–Base Breakdown Voltage (IC = –100 mAdc, IE = 0)
V(BR)CBO
–12
—
Vdc
Emitter–Base Breakdown Voltage (IE = –100 mAdc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCE = –6.0 Vdc, VBE = 0)
(VCE = –6.0 Vdc, VBE = 0, TA = 65°C)
ICES
—
–0.01
–1.0
Adc
Base Cutoff Current (VCE = –6.0 Vdc, VEB = 0)
IB
—
–10
nAdc
1. FR–5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
569
Publication Order Number:
MMBT3640LT1/D
MMBT3640LT1
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBT3645 | 制造商:Texas Instruments 功能描述: |
| MMBT3646 | 功能描述:两极晶体管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3646_Q | 功能描述:两极晶体管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3702 | 功能描述:两极晶体管 - BJT PNP/ 25V/ 800mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3702_Q | 功能描述:两极晶体管 - BJT PNP/ 25V/ 800mA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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