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参数资料
| 型号： | MMBT3640LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 80 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 155K |
| 代理商： | MMBT3640LT1 |
MMBT3640LT1
http://onsemi.com
570
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(3)
DC Current Gain
(IC = –10 mAdc, VCE = –0.3 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
hFE
30
20
120
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc, TA = 65°C)
VCE(sat)
—
–0.2
–0.6
–0.25
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –0.5 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
–0.75
–0.8
—
–0.95
–1.0
–1.5
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
500
—
MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
3.5
pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
3.5
pF
SWITCHING CHARACTERISTICS
Delay Time
(VCC = –6.0 Vdc, IC = –50 mAdc,
td
—
10
ns
Rise Time
(VCC
6.0 Vdc, IC
50 mAdc,
VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc)
tr
—
30
ns
Storage Time
(VCC = –6.0 Vdc, IC = –50 mAdc,
ts
—
20
ns
Fall Time
(VCC
6.0 Vdc, IC
50 mAdc,
IB1 = IB2 = –5.0 mAdc)
tf
—
12
ns
Turn–On Time
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = –0.5 mAdc)
ton
—
25
60
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –50 mAdc, VEB(off) = –1.9 Vdc, IB1 = IB2 = –5.0 mAdc)
(VCC = –1.5 Vdc, IC = –10 mAdc, IB1 = IB2 = –0.5 mAdc)
toff
—
35
75
ns
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
VBB = +1.9 V VCC = -6.0 V
0
-6.8 V
Vin
51
0.1 F
1.0 k
110
Vout
680
PULSE SOURCE
RISE TIME ≤ 1.0 ns
PULSE WIDTH ≥ 100 ns
Zin = 50 OHMS
FALL TIME ≤ 1.0 ns
TO SAMPLING SCOPE
INPUT Z ≥ 100 k
RISE TIME ≤ 1.0 ns
NOTES: Collector Current = 50 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 5.0 mA.
VBB = -6.0 V VCC = 1.5 V
0
5.0 V
Vin
51
0.1 F
5.0 k
130
Vout
5.0 k
PULSE SOURCE
RISE TIME ≤ 1.0 ns
PULSE WIDTH ≥ 200 ns
Zin = 50 OHMS
FALL TIME ≤ 1.0 ns
TO SAMPLING SCOPE
INPUT Z ≥ 100 k
RISE TIME ≤ 1.0 ns
Figure 1.
Figure 2.
NOTES: Collector Current = 10 mA,
NOTES: Turn–On and Turn–Off Time
NOTES: Base Currents = 0.5 mA.
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