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参数资料
| 型号： | MMBT3646L99Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | SOT-23, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 45K |
| 代理商： | MMBT3646L99Z |
2001 Fairchild Semiconductor Corporation
Rev. A, August 2001
MMBT3646
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
15
V
VCES
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
5
IC
Collector Current (DC)
- Continuous
300
mA
PD
Total Device Dissipation
- Derate above 25
°C
@ TA=25°C
625
5
mW
mW/
°C
TJ, TSTG
Operating and Storage Junction Temperature Range
150
°C
Symbol
Parameter
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CES
Collector-Emitter Breakdown Voltage (IC = 100Adc, VBE = 0)
40
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage (1) (IC = 10mAdc, IB = 0)
15
V
V(BR)CBO
Collector-Base Breakdown Voltage (IC = 100Adc, IE = 0)
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage (IE = 100Adc, IC = 0)
5
V
ICES
Collector Cut-off Current (VCE = 20Vdc, VBE = 0)
(VCE = 20Vdc, VBE = 0, TA = 65°C)
0.5
3
A
On Characteristics (1)
hFE
DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc)
(IC = 100mAdc, VCE = 0.5Vdc)
(IC = 300mAdc, VCE = 1Vdc)
30
25
15
120
VCE(sat)
Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
(IC = 30mA, IB = 3mA, TA =65°C)
0.2
0.28
0.5
0.3
V
VBE(sat)
Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
0.73
0.95
1.2
1.7
V
MMBT3646
Switching Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 23
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