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参数资料
| 型号： | MMBT3904-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 135K |
| 代理商： | MMBT3904-GS08 |
VISHAY
MMBT3904
Document Number 85124
Rev. 1.2, 19-May-04
Vishay Semiconductors
www.vishay.com
1
3
2
E
B
C
3
1
2
18822
Small Signal Transistor (NPN)
Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
As complementary type, the PNP transistor
MMBT3906 is recommended.
This transistor is also available in the TO-92 case
with the type designation 2N3904.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout.
2) Device on alumina substrate.
Maximum Thermal Resistance
1) Device on fiberglass substrate, see layout.
Part
Type differentiation
Ordering code
Marking
Remarks
MMBT3904
hFE, 100 to 300 @ 10 mA
MMBT3904-GS18 or MMBT3904-GS08
1AM
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Collector - base voltage
VCBO
60
V
Collector - emitter voltage
VCEO
40
V
Emitter - base voltage
VEBO
6V
Collector current
IC
200
mA
Power dissipation
TA = 25 °C
Ptot
2251)
mW
Ptot
3002)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
substrate backside
RthSB
3201)
°C/W
Thermal resistance junction to
ambient air
RthJA
4501)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 65 to + 150
°C
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| MMBT3906T/R | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBT3906W | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906WT/R7 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT3906 | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT4124 | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3904-GS18 | 制造商:Vishay Angstrohm 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R |
| MMBT3904-HF | 功能描述:射频双极电源晶体管 I=200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MMBT3904-HF_12 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:General Purpose Transistor |
| MMBT3904K | 功能描述:两极晶体管 - BJT NPN EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistor(NPN Silicon) |
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