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参数资料
| 型号： | MMBT3904-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 135K |
| 代理商： | MMBT3904-GS08 |
www.vishay.com
2
Document Number 85124
Rev. 1.2, 19-May-04
VISHAY
MMBT3904
Vishay Semiconductors
Electrical DC Characteristics
Electrical AC Characteristics
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC Current gain
VCE = 1 V, IC = 0.1 mA
hFE
40
VCE = 1 V, IC = 1 mA
hFE
70
VCE = 1 V, IC = 10 mA
hFE
100
300
VCE = 1 V, IC = 50 mA
hFE
60
VCE = 1 V, IC = 100 mA
hFE
30
Collector - base breakdown
voltage
IC = 10 A, IE = 0
V(BR)CBO
60
V
Collector - emitter breakdown
voltage
IC = 10 mA, IB = 0
V(BR)CEO
40
V
Emitter - base breakdown
voltage
IE = 10 A, IC = 0
V(BR)EBO
6.0
V
Collector saturation voltage
IC = 10 mA, IB = 1 mA
VCEsat
0.2
V
IC = 50 mA, IB = 5 mA
VCEsat
0.3
V
Base saturation voltage
IC = 10 mA, IB = 1 mA
VBEsat
0.85
V
IC = 50 mA, IB = 5 mA
VBEsat
0.95
V
Collector-emitter cut-off current
VEB = 3 V, VCE = 30 V
ICEV
50
nA
Emitter-base cut-off current
VEB = 3 V, VCE = 30 V
IEBV
50
nA
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Gain - bandwidth product
VCE = 20 V, IC = 10 mA,
f = 100 MHz
fT
300
MHz
Collector - base capacitance
VCB = 5 V, f = 100 kHz
CCBO
4pF
Emitter - base capacitance
VEB = 0.5 V, f = 100 kHz
CEBO
8pF
Noise figure
VCE = 5 V, IC = 100 A,
RG = 1 K, f = 10 to15000 HZ
NF
5
dB
Input impedance
VCE = 10 V, IC = 1 mA, f = 1 kHz
hie
110
k
Small signal current gain
VCE = 10 V, IC = 1 mA, f = 1 kHz
hfe
100
400
Voltage feedback ratio
VCE = 10 V, IC = 1 mA, f = 1 kHz
hre
0.5 x 10-4
8 x 10-4
Output admittance
VCE = 1 V, IC = 1 mA, f = 1 kHz
hoe
140
S
Delay time (see fig. 1)
IB = 1 mA, IC = 10 mA
td
35
ns
Rise time (see fig. 1)
IB = 1 mA, IC= 10 mA
tr
35
ns
Storage time (see fig. 2)
- IB1 = IB2 = 1 mA, IC = 10 mA
ts
200
ns
Fall time (see fig. 2)
- IB1 = IB2 = 1 mA, IC = 10 mA
tf
50
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3904-GS18 | 制造商:Vishay Angstrohm 功能描述:Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R |
| MMBT3904-HF | 功能描述:射频双极电源晶体管 I=200mA RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray |
| MMBT3904-HF_12 | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:General Purpose Transistor |
| MMBT3904K | 功能描述:两极晶体管 - BJT NPN EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904L | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistor(NPN Silicon) |
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