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参数资料
| 型号： | MMBT3904T/R |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 132K |
| 代理商： | MMBT3904T/R |
MMBT3904T
—
NPN
Epit
axial
Silicon
T
ransistor
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MMBT3904T Rev. 1.0.0
1
February 2008
MMBT3904T
NPN Epitaxial Silicon Transistor
Features
General purpose amplifier transistor.
Ultra-Small Surface Mount Package for all types.
Suitable for general switching & amplification
Well suited for portable application
As complementary type, PNP MMBT3906T is recommended
Absolute Maximum Ratings T
a = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T
a=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* T
a=25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width
≤300us, Duty Cycle≤2%
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
200
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Max
Unit
PC
Collector Power Dissipation, by RθJA
250
mW
RθJA
Thermal Resistance, Junction to Ambient
500
°C/W
Symbol
Parameter
Test Condition
Min.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA, IE = 0
60
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
40
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10μA, IC = 0
6
V
ICEX
Collector Cut-off Current
VCE = 60V, VEB(OFF) = 3V
50
nA
hFE
DC Current Gain
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
40
70
100
60
30
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.2
0.3
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.65
0.85
0.95
V
fT
Current Gain Bandwidth Product
VCE = 20V, IC = 10mA, f = 100MHz
300
MHz
Cob
Output Capacitance
VCB = 5V, IE = 0, f = 1MHz
6
pF
Cib
Input Capacitance
VEB = 0.5V, IC = 0, f = 1MHz
15
pF
td
Delay Time
VCC = 3V, IC = 10mA
IB1 =- IB2 = 1mA
35
ns
tr
Rise Time
35
ns
ts
Storage Time
200
ns
tf
Fall Time
50
ns
SOT-523F
Marking : A04
B
C
E
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相关代理商/技术参数 |
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|---|---|
| MMBT3904T-T | 功能描述:两极晶体管 - BJT 600mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3904TT1 | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| MMBT3904TT1G | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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