参数资料
型号: MMBT3906
厂商: INFINEON TECHNOLOGIES AG
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 10/13页
文件大小: 882K
代理商: MMBT3906
2008-02-29
6
SMBT3906...MMBT3906
DC current gain hFE = (IC)
VCE = 1 V
EHP00774
10
mA
h
C
5
FE
10
1
0
10
-1
5
10
-1
0
1
2
Ι
125 C
25 C
-55 C
55
Saturation voltage IC = (VBEsat; VCEsat)
hFE = 10
EHP00767
2
0
V
BE sat
C
10
1
10
0
5
Ι
V
mA
0.2
0.4
0.6
0.8
1.0
1.2
CE sat
V
,
5
10
2
VBE
VCE
Collector-base capacitance Ccb = (VCB)
Emitter-base capacitance Ceb = (VEB)
0
4
8
12
16
V
22
CCB/CEB
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
pF
8
V
CB
/V
EB
CCB
CEB
Total power dissipation Ptot = (TS)
SMBT3906/ MMBT3906
0
15
30
45
60
75
90 105 120
°C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
P
tot
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