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参数资料
| 型号： | MMBT3906LT1 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 中文描述： | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 704K |
| 代理商： | MMBT3906LT1 |
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS(2)
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (2) (IC= -1.0 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -100Adc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -100Adc, IC= 0)
Base Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
Collector Cutoff Current (VCE= -30Vdc, VEB= -3.0Vdc)
DC Current Gain (IC= -0.1mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
(IC= -1.0mAdc, VCE= -1.0Vdc)
(IC= -10mAdc, VCE= -1.0Vdc)
(IC= -50mAdc, VCE= -1.0Vdc)
(IC= -100mAdc, VCE= -1.0Vdc)
V(BR)CEO
-40
-
Vdc
V(BR)CBO
-40
-
Vdc
V(BR)EBO
-5.0
-
Vdc
IBL
ICEX
-
-50
-
-50
nAdc
Vdc
fT
250
-
MHz
hFE
60
300
-
30
80
100
60
-
VCE(sat)
-
-0.25
-
-0.4
Symbol
Min
Max
Unit
(IC= -50mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage (IC= -10mAdc, IB= -1.0mAdc)
Current-Gain-Bandwidth Product (IC= -10mAdc, VCE= -20Vdc, f= 100MHz)
Cobo
Cibo
-
4.5
pF
td
tr
ts
tf
NF
-
ns
dB
ns
hie
-
10
2.0
12
k
hre
0.1
10
100
400
X 10-4
hfe
3.0
60
-
4.0
-
hoe
225
75
35
mhos
Output Capacitance (VCB= -5.0Vdc, IE= 0, f= 1.0MHz)
Input Capacitance (VEB= -0.5Vdc, IC= 0, f= 1.0MHz)
Voltage Feedback Ratio (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Output Admittance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
(VCC= -3.0Vdc, VBE= 0.5Vdc, IC= -10mAdc, IB1= -1.0mAdc)
(VCC= -3.0Vdc, IC= -10mAdc, IB1= IB2= -1.0mAdc)
Input lmpedance (VCE= -10Vdc, IC= -1.0mAdc, f= 1.0kHz)
Small-Signal Current Gain (VCE= -10Vdc, IC= -10mAdc, f= 1.0kHz)
Noise Figure (VCE= -5.0Vdc, IC= -100Adc, RS= 1.0k, f= 1.0kHz)
Vdc
VBE(sat)
-0.65
-0.85
-
-0.95
(IC= -50mAdc, IB= -5.0mAdc)
Delay Time
Rise Time
Storage Time
Fall Time
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300
s,Duty Cycle<2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT3906LT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:General Purpose Transistor PNP Silicon |
| MMBT3906LT1G | 功能描述:两极晶体管 - BJT 200mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT3906LT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MMBT3906LT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMBT3906LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR SWITCHING PNP SOT-23 |
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