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参数资料
| 型号： | MMBT4403-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 代理商： | MMBT4403-13 |
DS30058 Rev. 7 - 2
1 of 4
MMBT4403
www.diodes.com
Diodes Incorporated
MMBT4403
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4401)
Ideal for Medium Power Amplification and Switching
Available in Lead Free/RoHS Compliant Version (Note 2)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-600
mA
Power Dissipation (Note 1)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
417
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
E
J
L
TOP VIEW
M
B
C
B
H
G
D
K
E
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 5, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K2T
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
a
0
°
8
°
All Dimensions in mm
E
B
C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
SPICE MODEL: MMBT4403
相关PDF资料 |
PDF描述 |
|---|---|
| MMBT4403LT1 | |
| MMBT4403T-13 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBT4403 | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBT5401LT1 | |
| MMBT5551S62Z | 200 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT4403-13-F | 制造商:Zetex / Diodes Inc 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin SOT-23 T/R 制造商:Diodes Incorporated 功能描述:TRANS GP BJT PNP 40V 0.6A 3PIN SOT-23 - Tape and Reel |
| MMBT4403-7 | 功能描述:两极晶体管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403-7-01-F | 制造商:DIODES 功能描述:PNP TRANSISTORS/SOT-23(LEAD FREE) |
| MMBT4403-7-F | 功能描述:两极晶体管 - BJT 40V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403E9 | 制造商:GENERAL INSTRUMENTS 功能描述: |
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