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参数资料
型号： MMBT3906WT3
厂商： ON SEMICONDUCTOR
元件分类： 小信号晶体管
英文描述： 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装： SC-70, 3 PIN
文件页数： 12/29页
文件大小： 485K
代理商： MMBT3906WT3
NPN MMBT3904WT1 PNP MMBT3906WT1
2–333
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
MMBT3904WT1
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
MMBT3906WT1
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
40
70
100
60
30
60
80
100
60
30
—
300
—
300
—
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
MMBT3906WT1
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat)
—
0.2
0.3
–0.25
–0.4
Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
MMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
MMBT3906WT1
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
0.65
—
–0.65
—
0.85
0.95
–0.85
–0.95
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT3904WT1
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
MMBT3906WT1
fT
300
250
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3906WT1
Cobo
—
4.0
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3906WT1
Cibo
—
8.0
10.0
pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1
hie
1.0
2.0
10
12
k
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1
hre
0.5
0.1
8.0
10
X 10–4
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1
hfe
100
400
—
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3906WT1
hoe
1.0
3.0
40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MMBT3904WT1
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MMBT3906WT1
NF
—
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc)
MMBT3904WT1
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
MMBT3906WT1
td
—
35
ns
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
MMBT3904WT1
(IC = –10 mAdc, IB1 = –1.0 mAdc)
MMBT3906WT1
tr
—
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
MMBT3904WT1
(VCC = –3.0 Vdc, IC = –10 mAdc)
MMBT3906WT1
ts
—
200
225
ns
Fall Time
(IB1 = IB2 = 1.0 mAdc)
MMBT3904WT1
(IB1 = IB2 = –1.0 mAdc)
MMBT3906WT1
tf
—
50
75
ns
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
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