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参数资料
| 型号： | MMBT404ALT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 12/22页 |
| 文件大小： | 294K |
| 代理商： | MMBT404ALT1 |
MMBT404ALT1
2–297
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –12 mAdc, VCE = –0.15 Vdc)
hFE
100
—
400
—
Collector–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
–0.15
–0.2
Vdc
Base–Emitter Saturation Voltage
(IC = –12 mAdc, IB = –0.4 mAdc)
(IC = –24 mAdc, IB = –1.0 mAdc)
VBE(sat)
—
–0.85
–1.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = –6.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
20
pF
SWITCHING CHARACTERISTICS
Delay time
(VCC = –10 Vdc, IC = –10 mAdc) (Figure 1)
td
—
43
—
ns
Rise Time
(IB1 = –1.0 mAdc, VBE(off) = –14 Vdc)
tr
—
180
—
ns
Storage Time
(VCC = –10 Vdc, IC = –10 mAdc)
ts
—
675
—
ns
Fall Time
(IB1 = IB2 = –1.0 mAdc) (Figure 1)
tf
—
160
—
ns
Figure 1. Switching Time Test Circuit
VBB
RBB
1.0 k
RB
10 k
0.1
F
Vin
51
TO SCOPE
1.0 k
VCC = –10 V
ton, td, tr
toff, ts and tf
Vin
(Volts)
VBB
(Volts)
–12
+1.4
+20.6
–11.6
Voltages and resistor values shown are
for IC = 10 mA, IC/IB = 10 and IB1 = IB2
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