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参数资料
| 型号： | MMBT4126-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/3页 |
| 文件大小： | 70K |
| 代理商： | MMBT4126-13 |
DS30106 Rev. 5 - 2
2 of 3
MMBT4126
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
V(BR)CBO
-25
V
IC = -10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-25
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-4.0
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
-50
nA
VCB = -20V, IE = 0V
Emitter Cutoff Current
IEBO
-50
nA
VEB = -3.0V, IC = 0V
ON CHARACTERISTICS (Note 3)
DC Current Gain
hFE
120
60
360
IC = -2.0mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.40
V
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.95
V
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Small Signal Current Gain
hfe
120
480
VCE = 1.0V, IC = -2.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = -5.0V, IC = -100
mA,
RS = 1.0k
W, f = 1.0kHz
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
K2B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K2B
YM
Marking Information
Device
Packaging
Shipping
MMBT4126-7
SOT-23
3000/Tape & Reel
Ordering Information
Date Code Key
(Note 4)
Note:
3. Short duration pulse test used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT4126-7-F.
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT4126-7 | 功能描述:两极晶体管 - BJT -25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4126-7-F | 功能描述:两极晶体管 - BJT -25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4126LT1 | 功能描述:两极晶体管 - BJT 200mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4126LT1G | 功能描述:两极晶体管 - BJT 200mA 25V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4126LT3G | 功能描述:两极晶体管 - BJT SS GP XSTR PNP 20V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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