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参数资料
| 型号： | MMBT4403-GS08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 86K |
| 代理商： | MMBT4403-GS08 |
www.vishay.com
2
Document Number 85145
Rev. 1.2, 24-May-04
VISHAY
MMBT4403
Vishay Semiconductors
Maximum Thermal Resistance
1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5 % alumina
Electrical DC Characteristics
1) Pulse test: pulse width ≤ 300 s, duty cycle ≤ 2 %
Electrical AC Characteristics
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to
ambient air
RthJA
556 1)
°C/W
RthJA
417 2)
°C/W
Junction temperature
Tj
150
°C
Storage temperature range
TS
- 55 to + 150
°C
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
DC current gain
- VCE = 1 V, - IC = 0.1 mA
hFE
30
- VCE = 1 V, - IC = 1 mA
hFE
60
- VCE = 1 V, - IC = 10 mA
hFE
100
- VCE = 2 V, - IC = 150 mA
1)
hFE
100
300
- VCE = 2 V, - IC = 500 mA
1)
hFE
20
Collector - base breakdown
voltage
- IC = 0.1 mA, IE = 0
- V(BR)CBO
40
V
Collector - emitter breakdown
voltage 1)
- IC = 1 mA, IB = 0
- V(BR)CEO
40
V
Emitter - base breakdown
voltage
- IE = 0.1 mA, IC = 0
- V(BR)EBO
5V
Collector - emitter saturation
voltage 1)
- IC = 150 mA, - IB = 15 mA
- VCEsat
0.40
V
- IC = 500 mA, - IB = 50 mA
- VCEsat
0.75
V
Base - emitter saturation voltage
1)
- IC = 150 mA, - IB = 15 mA
- VBEsat
0.75
0.95
V
- IC = 500 mA, - IB = 50 mA
- VBEsat
1.30
V
Collector - emitter cut - off
current
- VEB = 0.4 V, - VCE = 35 V
- ICEV
100
nA
Emitter - base cut - off current
- VEB = 0.4 V, - VCE = 35 V
- IBEV
100
nA
Parameter
Test condition
Symbol
Min
Typ
Max
Unit
Gain - bandwidth product
- VCE = 10 V, - IC = 20 mA,
f = 100 MHz
fT
200
MHz
Collector - base capacitance
- VCB = 10 V, f = 1 MHz, IE = 0
CCBO
8.5
pF
Emitter - base capacitance
- VEB = 0.5 V, f = 1 MHz, IC = 0
CEBO
30
pF
Input impedance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hie
1.5
15
k
Small signal current gain
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hfe
60
500
Voltage feedback ratio
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hre
0.1 x 10-4
8 x10-4
Output admittance
- VCE = 10 V, - IC = 1 mA,
f = 1 kHz
hoe
1
100
S
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相关代理商/技术参数 |
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|---|---|
| MMBT4403K | 功能描述:两极晶体管 - BJT PNP EPITAXIAL SILICON RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403LT1 | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403LT1G | 功能描述:两极晶体管 - BJT 600mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT4403LT1H | 制造商:ON Semiconductor 功能描述: |
| MMBT4403LT1S | 制造商:Motorola 功能描述:4403 MOT'93 T/R 制造商:Motorola Inc 功能描述:Transistor |
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