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参数资料
| 型号： | MMBT5771S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 103K |
| 代理商： | MMBT5771S62Z |
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 3.0 mA, IB = 0
15
V
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100
A, V
BE = 0
15
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
15
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
4.5
V
ICBO
Collector Cutoff Current
VCB = 8.0 V, IE = 0
10
nA
ICES
Collector Cutoff Current
VCE = 8.0 V, VBE = 0
VCE = 8.0 V, VBE = 0, TA= 125
°C
10
5.0
nA
A
IEBO
Emitter Cutoff Current
VEB = 4.5 V, IC = 0
1.0
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 0.5 V
IC = 10 mA, VCE = 0.3 V
IC = 10mA,VCE = 0.3V,TA = -55
°C
IC = 50 mA, VCE = 1.0 V
35
50
20
40
120
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.15
0.18
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.75
0.8
0.95
1.5
V
Ccb
Collector-Base Capacitance
VCB = 5.0 V, IE = 0,
f = 140 kHz
3.0
pF
Ceb
Emitter-Base Capacitance
VBE = 0.5 V, IC = 0,
f = 140 kHz
3.5
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 100 MHz
8.5
MHz
SWITCHING CHARACTERISTICS
ts
Storage Time
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
20
ns
ton
Turn-On Time
IC = 10 mA, VCC = 1.5 V,
IB = 1.0 mA
15
ns
toff
Turn-Off Time
IC = 10 mA, VCC = 1.5 V,
IB1 = IB2 = 1.0 mA
20
ns
PNP Switching Transistor
(continued)
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
2N5771
/
MMBT5771
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT589LT1 | 功能描述:两极晶体管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT589LT1G | 功能描述:两极晶体管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT589LT3 | 功能描述:两极晶体管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT589LT3G | 功能描述:两极晶体管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT5962 | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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