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参数资料
| 型号： | MMBTA05 |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 98K |
| 代理商： | MMBTA05 |
MMBTA05
THRU
MMBTA06
NPN Small Signal
General Purpose
Amplifier Transistors
Features
Epitaxial Planar Die Construction
Complementary PNP Types Available (MMBTA55/MMBTA56)
Ideal for Medium Power Amplification and Switching.
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
MMBTA05
MMBTA06
60
80
V
VCBO
Collector-Base Voltage
MMBTA05
MMBTA06
60
80
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current-Continuous
500
mA
PD
Power Dissipation*
300
mW
RθJA
Thermal Resistance, Junction to Ambient
357
K/W
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
MMBTA05
MMBTA06
60
80
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100
Adc, IC=0)
4.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=60Vdc, IE=0) MMBTA05
(VCB=80Vdc, IE=0) MMBTA06
---
0.1
Adc
ICES
Emitter Cutoff Current
(VCE=60Vdc, IB=0) MMBTA05
(VCE=80Vdc, IB=0) MMBTA06
---
0.1
Adc
ON CHARACTERISTICS
hFE
DC Current Gain
(VCE=1.0Vdc, IC=10mAdc)
(VCE=1.0Vdc, IC=100mAdc)
100
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc)
---
0.25
Vdc
VBE(on)
Base-Emitter On Voltage
(IC=100mAdc, IB=10mAdc)
---
1.2
Vdc
fT
Current-Gain—Bandwidth Product
(IC=10mAdc, VCE=2.0Vdc, f=100MHz)
100
---
MHz
* Valid provided that terminals are kept at ambient temperature..
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
SOT-23
Revision:
6
200
7/10/11
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
E
B
C
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking: MMBTA05:1H/
K1H/B05
www.mccsemi.com
1 of 2
MMBTA06:1GM/K1G/B06
相关PDF资料 |
PDF描述 |
|---|---|
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA05 | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA06 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA06/E8 | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA05 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, NPN, 60V SOT-23 |
| MMBTA05_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA05-7 | 功能描述:两极晶体管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA05-7-F | 功能描述:两极晶体管 - BJT 60V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA05LT1 | 功能描述:两极晶体管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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