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参数资料
| 型号： | MMBTA14/E9 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 25K |
| 代理商： | MMBTA14/E9 |
MMBTA13 and MMBTA14
Vishay Semiconductors
formerly General Semiconductor
Document Number 88229
www.vishay.com
10-May-02
1
New Product
Darlington Transistors (NPN)
Mounting Pad Layout
Collector
Base
Emitter
Features
NPN Silicon Darlington Transistor for
switching and amplifier applications.
High collector current High current gain
These transistors are also available in the TO-92
case with the type designation MPSA13 & MPSA14
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
300
mA
225(1)
Power Dissipation at TA = 25°C
(3)
Ptot
300(2)
mW
556(1)
Thermal Resistance Junction to Ambient Air(3)
R
ΘJA
417(2)
°C/W
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Notes:
(1) On FR-5 board
(2) On alumina substrate
(3) Valid provided that leads are kept at ambient temperature
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code:
1M for MMBTA13
1N for MMBTA14
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.031 (0.8)
0.037 (0.95)
.016 (0.4)
.056
(
1
.43
)
.037(0.95) .037(0.95)
ma
x
..004
(
0.1
)
.122 (3.1)
.016 (0.4)
1
2
3
Top View
.102 (2.6)
.007
(
0
.17
5)
.0
45
(
1
.15)
.110 (2.8)
.052
(
1
.33
)
.005
(
0
.1
25)
.094 (2.4)
.0
37
(
0
.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
相关PDF资料 |
PDF描述 |
|---|---|
| MMBTA13/E8 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA13 | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA14L-AE3-R | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA14G-AE3-R | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA14LT3 | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA14LT1 | 功能描述:达林顿晶体管 300mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA14LT1G | 功能描述:达林顿晶体管 300mA 30V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MMBTA14LT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 30V SOT-23 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 30V SOT-23 |
| MMBTA14LT1HTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans Darlington NPN 30V 0.3A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR DARL NPN 30V SOT-23 |
| MMBTA14-T | 功能描述:达林顿晶体管 300mA 30V RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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