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参数资料
| 型号： | MMBTA42S62Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | MMBTA42S62Z |
MPSA42
/
MMBTA42
/
PZTA42
NPN High Voltage Amplifier
This device is designed for application as a video output to
drive color CRT and other high voltage applications. Sourced
from Process 48.
MMBTA42
MPSA42
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
300
V
VCBO
Collector-Base Voltage
300
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current - Continuous
200
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA42
*MMBTA42
**PZTA42
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
350
2.8
1,000
8.0
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125
°C/W
PZTA42
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1D
B
C
SOT-223
E
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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