- 您现在的位置：买卖IC网 > PDF目录95976 > MMBTA92 (LITE-ON SEMICONDUCTOR CORP) 300 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMBTA92 |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | GREEN, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 172K |
| 代理商： | MMBTA92 |
MMBTA92
PNP General Purpose Transistor
FEATURES
Ideal for Medium Power Amplification and
Switching
Complementary NPN Types Available (MMBTA42)
MECHANICAL DATA
Case: SOT-23 Plastic
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-300
mA
Collector Power Dissipation
PC
300
mW
Thermal Resistance, Junction to Ambient
RΘJA
410
/W
℃
Junction Temperature
TJ
150
℃
Storage Temperature Range
TSTG
-55~+150
℃
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=-100A,IE=0
VCBO
-300
V
Collector-emitter breakdown voltage
IC=-1mA,IB=0
VCEO
-300
V
Emitter-base breakdown voltage
IE=-100A,IC=0
VEBO
-5
V
Collector-base cut-off current
VCB=-200V,IE=0
ICBO
-0.25
uA
Emitter-base cut-off current
VEB=-5V,IC=0
IEBO
-0.1
uA
VCE=-10V,IC=-1mA
hFE1
60
V
VCE=-10V,IC=-10mA
hFE2
100
200
V
DC current gain
VCE=-10V,IC=-30mA
hFE3
60
V
Collector-emitter saturation voltage
IC=-20mA,IB=-2mA
VCE(sat)
-0.2
V
Base-emitter saturation voltage
IC=-20mA,IB=-2mA
VBE(sat)
-0.9
V
Transition frequency
VCE=-20V,IC=-10mA,
f=30MHz
fT
50
MHz
REV. 1, Oct-2010, KSPR17
相关PDF资料 |
PDF描述 |
|---|---|
| MMBTA92 | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA92T/R7 | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMBTA93D87Z | PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA93L99Z | PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| MMBTA93 | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBTA92 T/R | 功能描述:开关晶体管 - 偏压电阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| MMBTA92,215 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBTA92 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS RF BIPOLAR TRANSISTOR TYPE: |
| MMBTA92_D87Z | 功能描述:两极晶体管 - BJT PNP Transistor High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。