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参数资料
| 型号： | MMBTA93LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/23页 |
| 文件大小： | 321K |
| 代理商： | MMBTA93LT3 |
2–417
Motorola Small–Signal Transistors, FETs and Diodes Device Data
High Voltage Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MMBTA92
MMBTA93
Unit
Collector – Emitter Voltage
VCEO
–300
–200
Vdc
Collector – Base Voltage
VCBO
–300
–200
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
MMBTA92
MMBTA93
V(BR)CEO
–300
–200
—
Vdc
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MMBTA92
MMBTA93
V(BR)CBO
–300
–200
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
MMBTA92
(VCB = –160 Vdc, IE = 0)
MMBTA93
ICBO
—
–0.25
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
Adc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTA92LT1
MMBTA93LT1
*Motorola Preferred Device
*
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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