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参数资料
| 型号： | MMBTH24LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 1/22页 |
| 文件大小： | 291K |
| 代理商： | MMBTH24LT3 |
2–424
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VHF Mixer Transistor
NPN Silicon
Designed for
fT = 400 MHz Min @ 8 mA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current – Continuous
IC
50
mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
30
—
Vdc
Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ICBO
—
50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTH24LT1
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
1
2
3
Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBTH34 | 功能描述:射频双极小信号晶体管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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| MMBTH81 | 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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| MMBTH81_D87Z | 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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