参数资料
型号: MMBTH69LT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, CASE 318-08, 3 PIN
文件页数: 1/21页
文件大小: 287K
代理商: MMBTH69LT3
2–426
Motorola Small–Signal Transistors, FETs and Diodes Device Data
UHF/VHF Transistor
PNP Silicon
Designed for UHF/VHF Amplifier Applications
High Current Gain Bandwidth Product
fT = 2000 MHz Min @ 10 mA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–15
Vdc
Collector–Base Voltage
VCBO
–15
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
DEVICE MARKING
MMBTH69LT1 = M3J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–15
Vdc
Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0)
V(BR)CBO
–15
Vdc
Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0)
V(BR)EBO
–4.0
Vdc
Collector Cutoff Current (VCB = –10 Vdc, IE = 0)
ICBO
–100
nAdc
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –10 Vdc)
hFE
30
300
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
2000
MHz
Collector–Base Capacitance
(VCE = –10 Vdc, IE = 0, f = 1.0 MHz)
Crb
0.35
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTH69LT1
Motorola Preferred Device
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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