参数资料
型号: MMBTH69LT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, CASE 318-08, 3 PIN
文件页数: 18/21页
文件大小: 287K
代理商: MMBTH69LT3
6–5
Packaging Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA, IEC, EIAJ
Radial Tape in Fan Fold
Box or On Reel
Radial tape in fan fold box or on reel of the reliable TO–92 package are
the best methods of capturing devices for automatic insertion in printed
circuit boards. These methods of taping are compatible with various
equipment for active and passive component insertion.
Available in Fan Fold Box
Available on 365 mm Reels
Accommodates All Standard Inserters
Allows Flexible Circuit Board Layout
2.5 mm Pin Spacing for Soldering
EIA–468, IEC 286–2, EIAJ RC1008B
Ordering Notes:
When ordering radial tape in fan fold box or on reel, specify the style per
Figures 3 through 8. Add the suffix “RLR” and “Style” to the device title, i.e.
MPS3904RLRA. This will be a standard MPS3904 radial taped and
supplied on a reel per Figure 9.
Fan Fold Box Information — Order in increments of 2000.
Reel Information — Order in increments of 2000.
US/European Suffix Conversions
US
EUROPE
RLRA
RL
RLRE
RL1
RLRM
ZL1
TO–92
RADIAL
TAPE IN
FAN FOLD
BOX OR
ON REEL
相关PDF资料
PDF描述
MMBTH81LT1 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT3 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMC2112CCPV33 32-BIT, FLASH, 33 MHz, RISC MICROCONTROLLER, PQFP144
MMDF2C01HDR2 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MMDF2C01HDR2 5.2 A, 20 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
MMBTH81 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
MMBTH81 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor
MMBTH81_D87Z 功能描述:射频双极小信号晶体管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel
MMBTH81_Q 功能描述:两极晶体管 - BJT PNP RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBTRA101 RF 功能描述:两极晶体管 - BJT PNP digital trans 4.7/4.7kohm RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2