参数资料
| 型号： | MMBZ12VAL,215 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 12/17页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROT DBL 8.5V SOT-23 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 8.5V |
| 电压 - 击穿： | 11.4V |
| 功率（瓦特）： | 40W |
| 电极标记： | 2 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 其它名称： | 568-8084-6 |
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
8. Application information
The MMBZxAL series is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide
a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL,
MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line,
for a 10/1000 μ s waveform.
line 1 to be protected
line 2 to be protected
MMBZxAL
GND
unidirectional protection
of two lines
line 1 to be protected
MMBZxAL
GND
bidirectional protection
of one line
006aab842
Fig 10. Typical application: ESD and transient voltage protection of data lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the MMBZxAL series as close to the input terminal or connector as possible.
2. The path length between the MMBZxAL series and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all PCB conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
MMBZXAL_SER_2
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2009
12 of 17
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBZ12VALT1 | 功能描述:TVS二极管阵列 12V Dual Zener RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT1G | 功能描述:TVS二极管阵列 12V Dual Zener Common Anode RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| MMBZ12VALT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VALT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:24 and 40 Watt Peak Power Zener Transient Voltage Suppressors |
| MMBZ12VDG | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Double ESD protection diodes for transient overvoltage suppression |
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