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参数资料
| 型号： | MMDF2C01HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 7/12页 |
| 文件大小： | 372K |
| 代理商： | MMDF2C01HDR2 |
MMDF2C01HD
4
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
TJ = 25°C
VGS = 2.7 V
4.5 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
8
0.03
0.04
0.05
0.06
0.07
0
2
4
8
0.030
0.035
0.040
0.050
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
TJ = 25°C
ID = 2 A
6
– 50
– 25
0
25
50
75
100
125
150
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.045
6
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
8
0.1
0.20
0.25
0.30
0.35
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25°C
ID = 1 A
6
0.15
Figure 3. On–Resistance versus
Gate–To–Source Voltage
0
0.8
1.6
4
0.10
0.15
0.20
0.30
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ = 25°C
VGS = 2.7 V
4.5 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.25
2.4
3.2
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
– 50
– 25
0
25
50
75
100
125
150
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 2 A
0
0.5
1
2
1.5
VGS = 4.5 V
ID = 4 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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