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参数资料
| 型号： | MMDF2C01HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 5.2 A, 20 V, 0.055 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SO-8 |
| 文件页数： | 9/12页 |
| 文件大小： | 372K |
| 代理商： | MMDF2C01HDR2 |
MMDF2C01HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
TJ = 25°C
Ciss
Coss
Crss
VDS = 0 V
VGS = 0 V
0
Ciss
Crss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
RG, GATE RESISTANCE (OHMS)
0.1
10
100
10
1
t,
TIME
(ns)
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
10
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
8
6
4
2
0
4
2
0
QT, TOTAL CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
5
3
1
2
4
6
8
10
ID = 4 A
TJ = 25°C
VDS
VGS
Q2
Q3
Q1
1
QT
400
800
1200
2000
1600
8
0
8
12
VGS
VDS
4
TJ = 25°C
VDS = 0 V
VGS = 0 V
0
Crss
Ciss
Coss
Crss
Ciss
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (Volts)
C,
CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
10
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
8
6
4
2
0
4
2
0
QT, TOTAL CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
5
3
1
2
4
6
8
10
ID = 2 A
TJ = 25°C
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
t,
TIME
(ns)
VDD = 6 V
ID = 2 A
VGS = 4.5 V
TJ = 25°C
tr
tf
td(off)
td(on)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C02E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C02HDR2 | 制造商:ON Semiconductor 功能描述: 制造商:Motorola Inc 功能描述: |
| MMDF2C03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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