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| 型号： | MMDF2C03HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 30V 3A 8-SOIC |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 10 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A，3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 16nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 24V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDF2C03HDR2OSCT |
MMDF2C03HD
TYPICAL ELECTRICAL CHARACTERISTICS
100
V GS = 0 V
N ? Channel
T J = 125 ° C
1000
V GS = 0 V
P ? Channel
10
100 ° C
100
T J = 125 ° C
100 ° C
1
0
5
10
15
20
25
30
10
0
5
10
15
20
25
30
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage
Current versus Voltage
V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? To ? Source Leakage
Current versus Voltage
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals ( D t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain ? gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I G(AV) ) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/I G(AV)
During the rise and fall time interval when switching a
resistive load, V GS remains virtually constant at a level
known as the plateau voltage, V SGP . Therefore, rise and fall
times may be approximated by the following:
t r = Q 2 x R G /(V GG ? V GSP )
t f = Q 2 x R G /V GSP
where
V GG = the gate drive voltage, which varies from zero to V GG
R G = the gate drive resistance
and Q 2 and V GSP are read from the gate charge curve.
During the turn ? on and turn ? off delay times, gate current
is not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t d(on) = R G C iss In [V GG /(V GG ? V GSP )]
The capacitance (C iss ) is read from the capacitance curve
at a voltage corresponding to the off ? state condition when
calculating t d(on) and is read at a voltage corresponding to the
on ? state when calculating t d(off) .
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
t d(off) = R G C iss In (V GG /V GSP )
http://onsemi.com
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF2N02ER2G | 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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