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| 型号： | MMDF3N02HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.8A 8-SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 16V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MMDF3N02HD
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSS
20
?
?
?
?
?
29
?
?
?
?
?
1.0
10
100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 3.0 Adc)
(V GS = 4.5 Vdc, I D = 1.5 Adc)
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.5 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
2.0
1.5
4.0
0.058
0.074
3.88
2.0
?
0.090
0.100
?
Vdc
mV/ ° C
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
455
630
pF
Output Capacitance
Transfer Capacitance
(V DS = 16 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
184
45
250
90
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
?
11
22
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 10 Vdc, I D = 3.0 Adc,
V GS = 4.5 Vdc, R G = 6.0 W )
(V DD = 10 Vdc, I D = 3.0 Adc,
V GS = 10 Vdc, R G = 6.0 W )
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
58
17
20
7.0
32
27
21
116
35
40
21
64
54
42
Gate Charge
See Figure 8
(V DS = 16 Vdc, I D = 3.0 Adc,
V GS = 10 Vdc)
Q T
Q 1
Q 2
?
?
?
12.5
1.3
2.8
18
?
?
nC
Q 3
?
2.4
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage (Note 2)
Reverse Recovery Time
See Figure 15
Reverse Recovery Stored Charge
(I S = 3.0 Adc, V GS = 0 Vdc)
(I S = 3.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 3.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.79
0.72
23
18
5.0
0.025
1.3
?
?
?
?
?
Vdc
ns
m C
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
http://onsemi.com
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