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| 型号： | MMDF3N04HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 40V 3.4A 8-SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 32V |
| 功率 - 最大： | 1.39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDF3N04HDR2OSCT |
MMDF3N04HD
Power MOSFET
3 Amps, 40 Volts
N ? Channel SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the drain ? to ? source
diode has a very low reverse recovery time. These devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc ? dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO ? 8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? I DSS Specified at Elevated Temperature
? Mounting Information for SO ? 8 Package Provided
? Avalanche Energy Specified
? This is a Pb ? Free Device
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value Unit
Drain ? to ? Source Voltage V DSS 40 Vdc
V (BR)DSS
40 V
G
8
1
http://onsemi.com
R DS(on) TYP I D MAX
80 m W @ TBD 3.0 A
N ? Channel
D
S
MARKING
DIAGRAM
8
SO ? 8 D3N04H
CASE 751 AYWW G
STYLE 11 G
1
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage ? Continuous
Drain Current
? Continuous @ T A = 25 ° C (Note 1)
? Continuous @ T A = 70 ° C (Note 1)
? Pulsed Drain Current (Note 3)
Total Power Dissipation @ T A = 25 ° C (Note 1)
Linear Derating Factor (1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Linear Derating Factor (2)
V DGR
V GS
I D
I D
I DM
P D
P D
40
± 20
3.4
3.0
40
2.0
16
1.39
11.11
Vdc
Vdc
Adc
Apk
W
mW/ ° C
W
mW/ ° C
D3N04H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source ? 1 1 8 Drain ? 1
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C (V DD = 25 Vdc,
V GS = 10 Vdc, Peak I L = 9.0 Apk,
L = 4.0 mH, V DS = 40 Vdc)
T J , T stg
E AS
? 55 to 150
162
° C
mJ
Gate ? 1
Source ? 2
Gate ? 2
2
3
4
7
6
5
Drain ? 1
Drain ? 2
Drain ? 2
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Rating
Thermal Resistance, (PCB Mount)
? Junction ? to ? Ambient, (Note 1)
? Junction ? to ? Ambient, (Note 2)
Symbol
R q JA
R q JA
Typ
?
?
Max
62.5
90
Unit
° C/W
Device
MMDF3N04HDR2G
Package
SO ? 8
(Pb ? Free)
Shipping ?
2500 Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When mounted on 1 ″ square FR ? 4 or G ? 10 board (V GS = 10 V, @ 10 Secs)
2. When mounted on minimum recommended FR ? 4 or G ? 10 board (V GS = 10 V,
@ Steady State)
3. Repetitive rating; pulse width limited by maximum junction temperature.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 5
1
Publication Order Number:
MMDF3N04HD/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
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