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| 型号： | MMDF3N04HDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 40V 3.4A 8-SOIC |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.4A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 32V |
| 功率 - 最大： | 1.39W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | MMDF3N04HDR2OSCT |
MMDF3N04HD
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0)
(Notes 4 & 6)
V (BR)DSS
40
?
?
4.3
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
(V DS = 40 Vdc, V GS = 0 Vdc)
(V DS = 40 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0)
I DSS
I GSS
?
?
?
0.015
0.15
0.013
2.5
10
500
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Cpk ≥ 2.0)
(V DS = V GS , I D = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Notes 4 & 6)
V GS(th)
1.0
?
2.0
4.9
3.0
?
Vdc
mV/ ° C
Static Drain ? to ? Source On ? Resistance
(V GS = 10 Vdc, I D = 3.4 Adc)
(V GS = 4.5 Vdc, I D = 1.7 Adc)
(Cpk ≥ 2.0)
(Notes 4 & 6)
R DS(on)
?
?
55
79
80
100
m W
Forward Transconductance (V DS = 3.0 Vdc, I D = 1.7 Adc)
(Note 4)
g FS
2.0
4.5
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
450
900
pF
Output Capacitance
Transfer Capacitance
(V DS = 32 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
130
32
230
96
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
?
9.0
18
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 20 Vdc, I D = 3.4 Adc,
V GS = 10 Vdc, R G = 6 W ) (Note 4)
t r
t d(off)
t f
?
?
?
15
28
19
30
56
38
Turn ? On Delay Time
t d(on)
?
13
26
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 20 Vdc, I D = 1.7 Adc,
V GS = 4.5 Vdc, R G = 6 W ) (Note 4)
t r
t d(off)
t f
?
?
?
77
17
20
144
34
40
Gate Charge
(V DS = 40 Vdc, I D = 3.4 Adc,
V GS = 10 Vdc) (Note 4)
Q T
Q 1
Q 2
Q 3
?
?
?
?
13.9
2.1
3.7
5.4
28
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Storage Charge
(I S = 3.4 Adc, V GS = 0 Vdc) (Note 4)
(I S = 3.4 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 3.4 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 4)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.87
0.8
27
20
7.0
0.03
1.5
?
?
?
?
?
Vdc
ns
m C
C pk =
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperature.
6. Reflects typical values. Max limit ? Typ
3 x SIGMA
http://onsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDF3N04HDR2G | 功能描述:MOSFET NFET SO8D 40V 3.4A 80mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MMDF3N06HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 60 VOLTS |
| MMDF3N06VL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual |
| MMDF3N06VLR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 3.3A 8-Pin SOIC N T/R |
| MMDF3NO2HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
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