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参数资料
| 型号： | MMDF4N01HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 代理商： | MMDF4N01HDR2 |
MMDF4N01HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
2.0
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
10
Adc
Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
0.6
—
0.8
2.8
1.1
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
—
0.035
0.043
0.045
0.055
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
425
595
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
270
378
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
—
115
230
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 )
td(on)
—
13
26
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
RG = 2.3 )
tr
—
60
120
Turn–Off Delay Time
VGS = 2.7 Vdc,
RG = 2.3 )
td(off)
—
20
40
Fall Time
G = 2.3 )
tf
—
29
58
Turn–On Delay Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 )
td(on)
—
10
20
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
RG = 2.3 )
tr
—
42
84
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 2.3 )
td(off)
—
24
48
Fall Time
G = 2.3 )
tf
—
28
56
Gate Charge
(See Figure 8)
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
QT
—
9.2
13
nC
(See Figure 8)
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q1
—
1.3
—
(VDS = 10 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc)
Q2
—
3.5
—
Q3
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.95
0.78
1.1
—
Vdc
Reverse Recovery Time
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
38
—
ns
Reverse Recovery Time
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
trr
—
38
—
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
—
17
—
(IS = 4.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
—
22
—
Reverse Recovery Stored Charge
QRR
—
0.028
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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