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参数资料
| 型号： | MMDF6N02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 193K |
| 代理商： | MMDF6N02HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistors
Dual HDTMOS devices are an advanced series of power
MOSFETs which utilize Motorola’s High Cell Density TMOS
process. These miniature surface mount MOSFETs feature low
RDS(on) and true logic level performance. Dual HDTMOS devices
are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applica-
tions are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular
and cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 12
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
6.5
6.0
52
Adc
Apk
Total Power Dissipation @ TA = 25°C (1)
PD
2.0
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction to Ambient
R
θJA
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes
TL
260
°C
DEVICE MARKING
D6N02H
(1) Mounted on 1” square FR4 or G–10 board (VGS = 4.5 V, @ 10 seconds).
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF6N02HDR2
13
″
12mm embossed tape
2500
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of
the Bergquist Company.
Order this document
by MMDF6N02HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
D
S
G
CASE 751–05, Style 11
SO–8
MMDF6N02HD
DUAL TMOS
POWER MOSFET
6.0 AMPERES
20 VOLTS
RDS(on) = 0.035 OHM
Motorola Preferred Device
REV 1
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相关代理商/技术参数 |
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| MMDF6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
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| MMDF7N02ZR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 7A 8-Pin SOIC N T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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