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参数资料
| 型号： | MMDF6N02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 193K |
| 代理商： | MMDF6N02HDR2 |
MMDF6N02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2.7 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
4
8
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1
3
0
4
8
12
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
23
4
10
0
0.015
0.03
0.045
1
357
9
13
0.05
0.06
0.07
0.04
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
0
2.5
5
20
1
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 6 A
TJ = 25°C
VGS = 2.5 V
VGS = 4.5 V
ID = 3 A
1.5
2
2.5
56
7
8
9
11
4.5 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
0.8
10
7.5
10
25
°C
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.2
0.4
0.6
0.8
1.4
1
1.2
1.6
1.8
2
2.1 V
1.7 V
1.9 V
VGS = 10 V
2.3 V
2.5 V
4.5 V
TJ = 25°C
10
6
2
6
10
0.01
0.025
0.04
0.005
0.02
0.035
0.01
0.02
0.03
0
0.4
0.2
0
0.1
12.5
15
17.5
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