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参数资料
| 型号： | MMDF6N02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 6500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/10页 |
| 文件大小： | 193K |
| 代理商： | MMDF6N02HDR2 |
MMDF6N02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
24.3
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
2.5
25
Adc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0 Vdc)
IGSS
—
0.3
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
—
0.8
2.86
1.2
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0) (3)
(VGS = 4.5 Vdc, ID = 6.0 Adc)
(VGS = 2.5 Vdc, ID = 3.0 Adc)
RDS(on)
—
28
42
35
49
m
Forward Transconductance (VDS = 12 Vdc, ID = 3.0 Adc)
gFS
7.0
8.6
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
10 Vdc V
0 Vdc
Ciss
—
515
572
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
345
372
Transfer Capacitance
f = 1.0 MHz)
Crss
—
150
178
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
3 5 Ad
td(on)
—
12
15
ns
Rise Time
(VDD = 10 Vdc, ID = 3.5 Adc,
VGS =4 0Vdc
tr
—
96
103
Turn–Off Delay Time
VGS = 4.0 Vdc,
RG = 10 )
td(off)
—
100
108
Fall Time
G
)
tf
—
130
140
Gate Charge
See Figure 8
(V
16 Vd
I
6 0 Ad
QT
—
11
12
nC
See Figure 8
(VDS = 16 Vdc, ID = 6.0 Adc,
Q1
—
1.2
—
( DS
, D
,
VGS = 4.0 Vdc)
Q2
—
6.1
—
Q3
—
3.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.84
0.77
1.2
—
Vdc
Reverse Recovery Time
(I
6 0 Ad
V
0 Vd
trr
—
102
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
ta
—
36
—
( S
,
GS
,
dIS/dt = 100 A/s)
tb
—
66
—
Reverse Recovery Stored Charge
QRR
—
0.150
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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