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参数资料
| 型号： | MMDF4N01HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4 A, 12 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 代理商： | MMDF4N01HDR2 |
MMDF4N01HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
VGS = 4.5 V
ID = 4 A
8
TJ = 25°C
4.5 V
VGS = 8 V
3.1 V
2.7 V
2.5 V
2.3 V
2.1 V
1.9 V
1.5 V
1.7 V
1.3 V
TJ = 25°C
VGS = 2.7 V
4.5 V
0
0.4
0.8
1.2
1.6
2
0.2
0.6
1
1.4
1.8
0
0.4
0.8
1.2
1.6
2
0.2
0.6
1
1.4
1.8
0
2
4
6
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
1
1.2
1.4
2.2
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2
4
8
0.03
0.04
0.05
0.06
0.07
0
2
4
8
0.030
0.035
0.040
0.050
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
2
4
12
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
VGS = 0 V
TJ = 25°C
ID = 2 A
1.6
1.8
2
6
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
10
8
10
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2
4
8
6
25
°C
100
°C
TJ = – 55°C
0.045
6
0
0.5
1
2
1.5
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