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参数资料
| 型号： | MMDF7N02ZR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 4/10页 |
| 文件大小： | 190K |
| 代理商： | MMDF7N02ZR2 |
MMDF7N02Z
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
6.0
12
15
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
0
0.5
1.0
0
6.0
12
15
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2.0
4.0
10
0.01
0.04
0.06
0
2.0
4.0
6.0
8.0
12
0.05
0.04
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
0
4.0
20
1.0
100
10,000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100°C
25
°C
–55
°C
TJ = 25°C
VGS = 0 V
ID = 7.0 A
TJ = 25°C
VGS = 2.7 V
VGS = 4.5 V
ID = 3.5 A
1.5
2.0
2.5
6.0
8.0
10
4.5 V
– 50
– 25
0
25
50
75
100
125
150
TJ = 125°C
1.0
10
8.0
25
°C
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1.0
1.5
2.0
3.0
10 V
1.9 V
VGS = 1.7 V
2.3 V
4.5 V
TJ = 25°C
9.0
3.0
9.0
0.03
0.02
0.05
0.01
0.02
0.03
0
0.5
0
0.1
12
2.1 V
1000
16
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