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| 型号： | MMDL101T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封装： | PLASTIC, CASE 477-02, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 48K |
| 代理商： | MMDL101T1 |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 1
1
Publication Order Number:
MMDL101T1/D
MMDL101T1
Schottky Barrier Diode
Schottky barrier diodes are designed primarily for highefficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
Features
Very Low Capacitance Less than 1.0 pF @ 0 V
Low Noise Figure 6.0 dB Typ @ 1.0 GHz
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
7.0
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
Derate above 25
°C
PD
200
1.57
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
635
°C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. FR5 Minimum Pad
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
7.0
10
V
Diode Capacitance
CT
0.88
1.0
pF
Reverse Leakage
(VR = 3.0 V)
IR
20
250
nAdc
Noise Figure
(f = 1.0 GHz), (Note 3)*
NF
6.0
dB
Forward Voltage
(IF = 10 mA)
VF
0.5
0.6
Vdc
*Notes on Next Page
1.0 pF SCHOTTKY
BARRIER DIODE
Device
Package
Shipping
ORDERING INFORMATION
MMDL101T1
SOD323
3000 / Tape & Reel
PLASTIC
SOD323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
http://onsemi.com
MMDL101T1G
SOD323
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
4M
= Device Code
M
= Date Code*
G
= PbFree Package
*Date Code orientation may vary depending
upon manufacturing location.
MARKING DIAGRAM
(Note: Microdot may be in either location)
1
2
4M M
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDL101T1G | 功能描述:肖特基二极管与整流器 7V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMDL301 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Hot-Carrier Diodes |
| MMDL301T1 | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMDL301T1G | 功能描述:肖特基二极管与整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| MMDL6050 | 制造商:LRC 制造商全称:Leshan Radio Company 功能描述:Switching Diode |
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