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参数资料
| 型号： | MMDL101T1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, VHF-UHF BAND, MIXER DIODE |
| 封装： | PLASTIC, CASE 477-02, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 48K |
| 代理商： | MMDL101T1 |
MMDL101T1
http://onsemi.com
2
TYPICAL CHARACTERISTICS
Figure 1. Reverse Leakage
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Noise Figure
PLO, LOCAL OSCILLATOR POWER (mW)
C,
CAP
ACIT
ANCE
(pF)
NF
,NOISE
FIGURE
(dB)
,
FORW
ARD
CURRENT
(mA)
I F
,REVERSE
LEAKAGE
(
A)
I R
m
0.1
0.2
0.5
1.0
2.0
5.0
10
11
10
9
8
7
6
5
4
3
2
1
0
1.0
2.0
3.0
4.0
1.0
0.9
0.8
0.7
0.6
0.3
0.4
0.5
0.6
100
10
1.0
0.1
0.7
0.8
30
40
50
60
70
80
100
1.0
130
110
120
90
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
Figure 5. Noise Figure Test Circuit
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
NOISE
FIGURE METER
H.P. 342A
DIODE IN
TUNED
MOUNT
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
VR = 3.0 Vdc
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
TA = 40°C
TA = 85°C
TA = 25°C
2. CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
3. Noise figure measured with diode under test in tuned diode
mount using UHF noise source and local oscillator (LO)
frequency of 1.0 GHz. The LO power is adjusted for
1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5.
NOTES ON TESTING AND SPECIFICATIONS
MMBD110T1
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