- 您现在的位置：买卖IC网 > PDF目录95978 > MMDT2222A-13 (DIODES INC) 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMDT2222A-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 1/4页 |
| 文件大小： | 77K |
| 代理商： | MMDT2222A-13 |
DS30125 Rev. 8 - 2
1 of 4
MMDT2222A
www.diodes.com
Diodes Incorporated
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMDT2907A)
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Compliant Version (Note 3)
Features
Maximum Ratings
@ TA = 25
°C unless otherwise specified
A
M
J
L
D
B C
H
K
G
F
C
2
C
2
B
1
B
1
E
1
E
1
E
2
E
2
B
2
B
2
C
1
C
1
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
Terminal Connections: See Diagram
Marking (See Page 2): K1P
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approx.)
MMDT2222A
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Characteristic
Symbol
MMDT2222A
Unit
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
600
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
°C/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
SPICE MODEL: MMDT2222A
相关PDF资料 |
PDF描述 |
|---|---|
| MMDT2222AT/R7 | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222AT/R13 | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222A | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222AP | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222V-TP | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2222A-7 | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2222A7F | 制造商:Diodes Incorporated 功能描述: |
| MMDT2222A-7-F | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2222AG-AL6-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222AL-AL6-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。