- 您现在的位置：买卖IC网 > PDF目录95978 > MMDT2222A-13 (DIODES INC) 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | MMDT2222A-13 |
| 厂商： | DIODES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件页数： | 2/4页 |
| 文件大小： | 77K |
| 代理商： | MMDT2222A-13 |
DS30125 Rev. 8 - 2
2 of 4
MMDT2222A
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
75
V
IC = 10
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
10
nA
mA
VCB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150
°C
Collector Cutoff Current
ICEX
10
nA
VCE = 60V, VEB(OFF) = 3.0V
Emitter Cutoff Current
IEBO
10
nA
VEB = 3.0V, IC = 0
Base Cutoff Current
IBL
20
nA
VCE = 60V, VEB(OFF) = 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
35
50
75
100
40
50
35
300
IC = 100
mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55
°C
IC = 150mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.3
1.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.6
1.2
2.0
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
8pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
—25
pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product
fT
300
MHz
VCE = 20V, IC = 20mA,
f = 100MHz
Noise Figure
NF
4.0
dB
VCE = 10V, IC = 100
mA,
RS = 1.0k
W, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
10
ns
VCC = 30V, IC = 150mA,
VBE(off) = - 0.5V, IB1 = 15mA
Rise Time
tr
25
ns
Storage Time
ts
225
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
Fall Time
tf
60
ns
Ordering Information (Note 5)
Device
Packaging
Shipping
MMDT2222A-7
SOT-363
3000/Tape & Reel
Notes:
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BAS40-06T-7-F.
Marking Information
K1P YMK1P
YM
K1P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
相关PDF资料 |
PDF描述 |
|---|---|
| MMDT2222AT/R7 | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222AT/R13 | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222A | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222AP | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT2222V-TP | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2222A-7 | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2222A7F | 制造商:Diodes Incorporated 功能描述: |
| MMDT2222A-7-F | 功能描述:两极晶体管 - BJT 40V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2222AG-AL6-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222AL-AL6-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。