参数资料
型号: MMDJ3N03BJT
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
封装: MINIATURE, PLASTIC, CASE 751-07, SOIC-8
文件页数: 3/6页
文件大小: 192K
代理商: MMDJ3N03BJT
MMDJ3N03BJT
http://onsemi.com
3
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
Figure 3. DC Current Gain
Figure 4. DC Current Gain
100
1000
1.0
IB, BASE CURRENT (mA)
1.00
0.50
0.25
IB, BASE CURRENT (mA)
10
0.1
IC, COLLECTOR CURRENT (A)
1000
100
10
V CE(sat)
,COLLECT
OREMITTER
VOL
TAGE
(V)
H
0
10
1.0
,DC
CURRENT
GAIN
FE
0.25 A
0.75
0.5 A
0.8 A
1.2 A
IC = 3.0 A
100
1000
1.0
0.25
0.10
0.05
V CE(sat)
,COLLECT
OREMITTER
VOL
TAGE
(V)
0
10
0.25 A
0.15
0.5 A
0.8 A
IC = 1.2 A
0.20
150°C
25°C
55 °C
10
0.1
IC, COLLECTOR CURRENT (A)
1000
100
10
H
1.0
,DC
CURRENT
GAIN
FE
150°C
25°C
55 °C
Figure 5. “On” Voltages
Figure 6. “On” Voltages
10
0.1
IC, COLLECTOR CURRENT (A)
10
0.1
0.01
1.0
V,
VOL
TAGE
(V)
10
0.1
IC, COLLECTOR CURRENT (A)
1.0
0.1
0.01
1.0
V,
VOL
TAGE
(V)
1.0
IC/IB = 10
VBE(sat)
VCE(sat)
IC/IB = 50
VBE(sat)
VCE(sat)
VCE = 4.0 V
VCE = 1.0 V
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