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参数资料
| 型号： | MMDJ3N03BJTR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | MINIATURE, PLASTIC, CASE 751-07, SOIC-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 192K |
| 代理商： | MMDJ3N03BJTR2 |
MMDJ3N03BJT
http://onsemi.com
2
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorBase Voltage
VCB
45
Vdc
CollectorEmitter Voltage
VCEO
30
Vdc
EmitterBase Voltage
VEB
± 6.0
Vdc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Base Current — Continuous
IB
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Ambient on 1″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Thermal Resistance Junction to Ambient on 0.012″ sq. (7.6 sq. mm)
Collector pad on FR4 board material with one die operating.
RθJA
100
185
_C/W
Total Power Dissipation @ TA = 25_C mounted on 1″ sq. (645 sq. mm)
Collector pad on FR4 board material with one die operating.
Derate above 25_C
PD
1.25
10
W
mW/_C
Maximum Temperature for Soldering
TL
260
_C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
—
—
Vdc
EmitterBase Voltage (IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
—
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
—
—
20
200
μAdc
Emitter Cutoff Current (VBE = 5.0 Vdc)
IEBO
—
—
10
mAdc
ON CHARACTERISTICS(1)
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
—
0.105
—
0.15
0.18
0.45
Vdc
BaseEmitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
—
—
1.25
Vdc
BaseEmitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
—
—
1.10
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
85
80
60
195
—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
—
85
135
pF
Input Capacitance (VEB = 8.0 Vdc)
Cib
—
200
—
pF
CurrentGain — Bandwidth Product(2)
(IC = 500 mAdc, VCE = 10 Vdc, Ftest = 1.0 MHz)
fT
—
72
—
MHz
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDJ3P03BJT | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 AMPERES |
| MMDJ-65608EV-30 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-30-E | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608EV-45 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| MMDJ-65608L-25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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