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参数资料
| 型号： | MMDT2222AT/R7 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, ULTRA SMALL, SC-70, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 161K |
| 代理商： | MMDT2222AT/R7 |
V = 30V, I =150mA
V (off) = -0.5V, I = 15mA
-
I = 10uA
www.panjit.com
1/
14/2009
Page 2
ELECTRICAL CHARACTERISTICS (Each Transistor) T = 25°C Unless otherwise noted
J
C
Parameter
Symbol
Min
Units
Collector-Emitter Breakdown Voltage
Conditions
Typ
Max
V(BR)CEO
40
-
V
C
75
-
V
Note 2. Short duration test pulse used to minimize self-heating
(BR)CBO
V
Collector-Base Breakdown Voltage
I = 10mA
I = 10uA
E
Emitter-Base Breakdown Voltage
(BR)EBO
V
V = 60V, V = 3.0V
EB
CE
ICEX
Collector Cutoff Current
6.0
-
V
-
10
nA
Base Cutoff Current
IBL
DC Current Gain (Note 2)
h FE
-
20
nA
-
0.3
V
-
1.0
V
35
-
Collector-Emitter Saturation
Voltage (Note 2)
CE(SAT)
V
I = 150mA, I = 15mA
CB
I = 500mA, I = 50mA
CB
Base-Emitter Saturation Voltage
(Note 2)
BE(SAT)
V
0.6
-
1.2
V
-
2.0
Gain-Bandwidth Product
T
f
300
-
MHz
Collector-Base Capacitance
CBO
C
-
8.0
pF
CB
V = 10V, f =1.0MHz
V = 20V, I = 20mA
f = 100MHz
Emitter-Base Capacitance
EBO
C-
-
25
pF
EB
V = 0.5V, f =1.0MHz
MMDT2222A
50
-
75
-
50
-
100
-
300
I = 0.1mA, V = 10V
CE
C
Delay Time
d
t-
-
10
ns
CC
Rise Time
r
t-
-
25
ns
Storage Time
s
t
-
225
ns
Fall Time
f
t
-
60
ns
V = 60V, V = 3.0V
EB
CE
I = 1.0mA, V = 10V
CE
C
I = 10mA, V = 10V
CE
C
I =10mA, V =10V, T =-55C
CE
C
I = 150mA, V = 10V
CE
C
I = 150mA, I = 15mA
CB
I = 500mA, I = 50mA
CB
C
CE
BE
C
B1
V = 30V, I =150mA
I = I = 15mA
CC
C
B2
B1
40
-
I = 500mA, V = 10V
CE
C
35
-
I = 150mA, V = 1.0V
CE
C
J
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMDT2222V | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222V_1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT2222V-7 | 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMDT2222V-7-F | 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN SOT-563 - Tape and Reel |
| MMDT2222V-TP | 功能描述:TRANSISTOR NPN DUAL 40V SOT563 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
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