参数资料
型号: MMDT2222AT/R7
元件分类: 小信号晶体管
英文描述: 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, ULTRA SMALL, SC-70, 6 PIN
文件页数: 3/4页
文件大小: 161K
代理商: MMDT2222AT/R7
1
10
100
0.1
1
10
100
Reverse Voltage, VR (V)
Ca
p
a
ci
ta
n
ce
(
p
F
CIB (EB)
COB (CB)
f=1 MHz
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
1000
Collector Current, I
C (mA)
V
BE
(s
at)
(V
)
T
J = 25 °C
T
J = 150 °C
I
C/IB = 10
T
J = 100 °C
0
50
100
150
200
250
300
350
400
450
500
0.1
1
10
100
1000
Collector Current, I
C (m A)
V
CE
(s
at
)(mV
)
T
J = 25 °C
T
J = 150 °C
I
C/IB = 10
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
10
100
1000
Collector Current, I
C (m A)
V
BE
(o
n
)
T
J = 25° C
T
J = 150° C
T
J = 100° C
V
CE = 10V
0
50
100
150
200
250
300
350
0.1
1
10
100
1000
Collector Current, I
C (mA)
h
FE
T
J = 25° C
T
J = 150° C
T
J = 100° C
V
CE = 10V
MMDT2222A
CHARACTERISTICS CURVES (Each Transistor)
J
T = 25°C Unless otherwise noted
www.panjit.com
1/
14/2009
Page 3
Fig. 2. VBE vs. Ic
Fig. 1. hFE vs. Ic
Fig. 3. VCE(sat) vs. Ic
Fig. 4. VBE(sat) vs. Ic
Fig. 5. Capacitances
相关PDF资料
PDF描述
MMDT2222AT/R13 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT2222A 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT2222AP 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT2222V-TP 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMDT2222V 600 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MMDT2222V 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2222V_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2222V-7 功能描述:两极晶体管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMDT2222V-7-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN SOT-563 - Tape and Reel
MMDT2222V-TP 功能描述:TRANSISTOR NPN DUAL 40V SOT563 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN(双) 电流 - 集电极 (Ic)(最大):100mA 电压 - 集电极发射极击穿(最大):45V Ib、Ic条件下的Vce饱和度(最大):600mV @ 5mA,100mA 电流 - 集电极截止(最大):- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA,5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP,SC-88,SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402